hyb18h1g321af?10/11/14 gddr3 graphics ram 1-gbit gddr3 graphics ram rohs compliant internet data sheet rev. 0.92 october 2007
internet data sheet hyb18h1g321af?10/11/14 1-gbit gddr3 qag_techdoc_rev411 / 3.31 qag / 2007-01-22 2 06122007-mw7d-3g3m we listen to your comments any information within this document that yo u feel is wrong, unclear or missing at all? your feedback will help us to continuous ly improve the quality of this document. please send your proposal (including a reference to this document) to: techdoc@qimonda.com hyb18h1g321af?10/11/14 revision history: 2007-10, rev. 0.92 page subjects (major chang es since last revision) all t wr changed from 14 to 13 39 t rp at speed bin -10 is changed from 13 to 14 36 i dd values were added. previous revision: rev. 0.91, 2007-08-08 all typo changes. previous revision: rev. 0.80, 2007-07-10 all adapted internet editition
hyb18h1g321af?10/11/14 1-gbit gddr3 internet data sheet rev. 0.92, 2007-10 3 06122007-mw7d-3g3m 1overview this chapter lists all main features of the product fam ily hyb18h1g321af?10/11/14 and the ordering information. 1.1 features ? 1.8 v v ddq io voltage ? 1.8 v v dd core voltage ? monolithic 1gbit gddr3 with an internally programmable organization of either two separate 512mbit memories (2048 k x 32 i/o x 8 banks) with separate chip select, or one 1gb memory (4096 k x 32 i/o x 8 banks) ? two cs: 4096 rows and 512 columns (128 burst start locations) per bank ? one cs: 8192 rows and 512 columns (128 burst start locations) per bank ? differential clock inputs (clk and clk ) ? cas latencies of 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17 ? write latencies of 3, 4, 5, 6, 7 ? burst sequence with length of 4, 8 ? 4n pre fetch ? short ras to cas timing for writes ? t ras lockout support ? t wr programmable for writes with auto-precharge ? data mask for write commands ? single ended read strobe (rdqs) per byte. rdqs edge- aligned with read data ? single ended write strobe (wdqs) per byte. wdqs center-aligned with write data ? dll aligns rdqs and dq transitions with clock ? programmable io interface including on chip termination (odt) ? autoprecharge option with co ncurrent auto precharge support ? 8k refresh (32ms) ? autorefresh and self refresh ? pg-tfbga-136 package ? calibrated output drive. active termination support ? rohs compliant product 1) table 1 ordering information 1) rohs compliant product: restriction of the use of certain hazar dous substances (rohs) in el ectrical and electronic equipment as defined in the directive 2002/95/ec issued by the european parliament and of the council of 27 january 2003. these substances include m ercury, lead, cadmium, hexavalent chromium, polybro minated biphenyls and polybrominated biphenyl ethers. part number 1) 1) hyb: designator for memory components 18h: vddq = 1.8v 1g: 1 gbit 32: x32 organization a: product revision f: lead and halogen-free organization clock (mhz) package hyb18h1g321af?10/11/14 32 1000 @cl12 pg-tfbga-136 700 @cl11 900 @cl11
hyb18h1g321af?10/11/14 1-gbit gddr3 internet data sheet rev. 0.92, 2007-10 4 06122007-mw7d-3g3m 1.2 description the qimonda 1-gbit gddr3 graphics ram is a high speed memory device, designed for high bandwidth intensive applications like pc graphics systems. the chip is programmable into two different configurations. in the default mode the architecture is organized as two 512 mbit me mories of 8 banks, each (two cs mode). in an alternate configuration, it behaves as a conventional, 8-bank 1 gbit dram (o ne cs mode). note that at 1000 mhz spe ed grade only one cs mode is supported. hyb18h1g321af?10/11/14 uses a do uble data rate interface and a 4 n -pre fetch architecture. the gddr3 interface transfers two 32 bit wide data words per clock cycle to /from the i/o pins. co rresponding to the 4 n -pre fetch a single write or read access consists of a 128 bit wide, one-clock-cycle data transfer at the internal memory co re and four correspo nding 32 bit wide, one- half-clock-cycle data transfers at the i/o pins. single-ended unidirectional read and write data strobes are transmitted simultaneously with read and write data respectively in order to capture data properly at the receivers of both the graphics sdram and the controller . data strobes are organized per byte of the 32 bit wide interface. for read commands th e rdqs are edge-aligned with data, and the wdqs are center- aligned with data for write commands. the hyb18h1g321af?10/11/14 operates from a differential clock (clk and clk ). commands (addresses and control signals) are registered at every positive edge of clk. input data is registered on both edges of wdqs, and output data is referenced to both edges of rdqs. in this document references to ?the positive edge of clk? impl y the crossing of the positive edge of clk and the negative edge of clk . similarly, the ?negative edge of clk? refers to the crossing of the negative e dge of clk and the positive edge of clk . references to rdqs are to be interpreted as any or all rdqs< 3:0>. wdqs, dm and dq should be interpreted in a similar fashion. read and write accesses to the hyb18h1g 321af?10/11/14 are burst oriented. the bu rst length is fixed to 4 and 8 and the two least significant bits of the burst address are ?don?t care? a nd internally set to low. accesses begin with the registratio n of an activate command, which is then followed by a read or write command. the address bits registered coincident with the activate command are used to select the bank and the row to be accessed. the address bits registered coincident with the read or write command are used to select the bank and the column location for the burst access. in two cs mode, each of the 2 x 8 banks consists of 4096 row locations and 512 co lumn locations. in one cs mode, the number of row locations doubles to 8192 rows while the number of column location remains unchanged at 512 columns. an auto precharge function can be combined with read and write to provide a self-t imed row precharge that is in itiated at the end of the burst access. the pipe lined, multibank architecture of the hyb18h 1g321af?10/11/14 allows for co ncurrent operation, thereby providing high effective bandwidth by hi ding row precharge and activation time. the ?on die termination? interface (odt) is optimized for high fr equency digital data transfers and is internally controlled. t he termination resistor value can be set using an external zq re sistor or disabled through the extended mode register. the output driver impedance can be set using the extended mode register. it can either be set to zq / 6 (auto calibration) or to 35, 40 or 45 ohms. auto refresh and power down with self refresh operations are supported. an industrial standard pg-tfbga-136 package is used which enables ultra high speed data transfer rates and a simple upgrade path from former ddr graphics sdram products.
hyb18h1g321af?10/11/14 1-gbit gddr3 internet data sheet rev. 0.92, 2007-10 5 06122007-mw7d-3g3m 2 configuration figure 1 ballout 1gbit gddr3 graphics ram in 1-cs mode in non merged mode(top view; mf = low) & |